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NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
* THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 3.6 V, IC = 100 mA, f = 460 MHz SiGe TECHNOLOGY: UHS2-HV process ABSOLUTE MAXIMUM RATINGS: VCBO = 20 V 3-PIN POWER MINIMOLD (34 PACKAGE)
* * * *
ORDERING INFORMATION
PART NUMBER NESG250134-AZ NESG250134-T1-AZ ORDER NUMBER NESG250134-AZ NESG250134-T1-AZ PACKAGE 3-pin power minimold (Pb-Free) Note1 QUANTITY 25 pcs (Non reel) 1 kpcs/reel SUPPLYING FORM * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape
Note 1. Contains lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 20 9.2 2.8 500 1.5 150 -65 to +150 UNIT V V V mA W C C
Note Mounted on 34.2 cm2 x 0.8 mm (t) glass epoxy PWB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NESG250134 THERMAL RESISTANCE (TA = 25C)
PARAMETER Thermal Resistance from Junction to Ambient
Note
SYMBOL Rthj-a
RATINGS 80
UNIT C/W
Note Mounted on 34.2 cm2 x 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = 25C)
PARAMETER Collector to Emitter Voltage Collector Current Input Power
Note
SYMBOL VCE IC Pin
MIN. - - -
TYP. 3.6 400 12
MAX. 4.5 500 17
UNIT V mA dBm
Note Input power under conditions of VCE 4.5 V, f = 460 MHz
NESG250134 ELECTRICAL CHARACHTERISTICS (TA = 25C)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Maximum Stable Gain Linear gain (1) Linear gain (2) Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2) ICBO IEBO hFE Note 1 fT VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 3 V, IC = 100 mA VCE = 3.6 V, IC = 100 mA, f = 460 MHz VCE = 3.6 V, IC = 100 mA, f = 460 MHz VCE = 3.6 V, IC = 100 mA, f = 460 MHz VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 0 dBm VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm VCE = 3.6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm - - 80 - - - 16 - 27 - - - - - 120 10 19 23 19 16 29 29 60 60 1 1 180 - - - - - - - - - A A - GHz dB dB dB dB dBm dBm % % SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
MSG
|S21e|
GL GL Po Po c c
2
Note 2
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. MSG = S21 S12
hFE CLASSIFICATION
RANK Marking hFE Value FB SN 80 to 180
NESG250134 TYPICAL CHARACHTERISTICS (TA = +25C, unless otherwise specified )
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF) 2.0 Total Power Dissipation Ptot (mW) 1.6 1.2 0.8 0.4 Nature Neglect Mounted on Glass epoxy PWB (34.2 cm2 x 0.8 mm (t) )
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 2 4 6 8 10 f = 1 MHz
1.5
0
25
50
75
100
125
150
Ambient Temperature TA (C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
1,000 Collector Current IC (mA) 100 10 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 VCE = 3 V Collector Current IC (mA) 1,000 100 10 1 0.1 0.01 0.001
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 4 V
0.0001 0.4
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
500 Collector Current IC (mA) 400 300 200 100 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA IB = 1 mA 1 2 3 4 5
0
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
NESG250134
DC CURRENT GAIN vs. COLLECTOR CURRENT
1,000 VCE = 3 V 1,000
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 4 V
DC Current Gain hFE
100
DC Current Gain hFE 100 Collector Current IC (mA) 1,000
100
10 10
10 10
100 Collector Current IC (mA)
1,000
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
20 Gain Bandwidth Product fT (GHz) 16 12 8 4 0 10 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 460 MHz 20 16 12 8 4 0 10
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
VCE = 3.6 V f = 460 MHz
100 Collector Current IC (mA)
1,000
100 Collector Current IC (mA)
1,000
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
20 Gain Bandwidth Product fT (GHz) 16 12 8 4 0 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 4 V f = 460 MHz 40 35 30 25 20 15 10 5 0 0.1
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
VCE = 3 V IC = 100 mA MSG MAG
|S21e|2 1 Frequency f (GHz) 10
100 Collector Current IC (mA)
1,000
Remark The graphs indicate nominal characteristics.
NESG250134
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 40 35 30 25 20 15 10 5 0 0.1 |S21e|2 1 Frequency f (GHz) 10 MSG MAG Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3.6 V IC = 100 mA 40 35 30 25 20 15 10 5 0 0.1 |S21e|2 1 Frequency f (GHz) 10 MSG MAG
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
VCE = 4 V IC = 100 mA
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 10 100 Collector Current IC (mA) 1,000 |S21e|2 MSG Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V f = 460 MHz MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
25 20 MSG 15 10 5 0 -5 10 100 Collector Current IC (mA) 1,000 |S21e|2 VCE = 3 V f = 900 MHz MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 10 100 Collector Current IC (mA) 1,000 |S21e|2 MSG Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3.6 V f = 460 MHz MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
25 20 MSG 15 10 5 0 -5 10 100 Collector Current IC (mA) 1,000 VCE = 3.6 V f = 900 MHz MAG
|S21e|2
Remark The graphs indicate nominal characteristics.
NESG250134
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 |S21e|2 MSG VCE = 4 V f = 460 MHz MAG
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
25 20 MSG 15 10 5 0 -5 10 100 Collector Current IC (mA) Collector Current IC (mA), Collector Efficiency C (%) Collector Current IC (mA), Collector Efficiency C (%) 1,000 |S21e|2 VCE = 4 V f = 900 MHz MAG
15 10 5 0 10
100 Collector Current IC (mA)
1,000
Output Power Pout (dBm), Power Gain GP (dB)
30 25 20 15 10 5
VCE = 3.6 V, f = 460 MHz IC (set) = 30 mA GP
600 500 400
Output Power Pout (dBm), Power Gain GP (dB)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 20 15 10 5 0 -10 -5 0 5 10 GP VCE = 3.6 V, f = 900 MHz IC (set) = 30 mA Pout 600 500 400 300 IC 200
Pout IC
300 200
C
-5 0 5 10 15
100 0 20
C
15
100 0 20
0 -10
Input Power Pin (dBm)
Input Power Pin (dBm)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
5 4 3 2 1 0 10 Ga 25 20 15 10 5
NF VCE = 3.6 V f = 460 MHz 100 Collector Current IC (mA)
0 1,000
Remark The graphs indicate nominal characteristics.
Associated Gain Ga (dB)
Noise Figure NF (dB)
NESG250134 PA EVALUATION BOARD (f = 460 MHz)
GND Vb C9 VC GND R1 C10
C1 RF IN C2
SN SN
C8 RF OUT C7
C3
L1
C4
C5
C6
L2
Notes
1. 38 x 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes
PA EVALUATION CIRCUIT (f = 460 MHz)
VCE VBE R1
C9 L2 L1 C1 RF IN C2 C3 C4 C5 C6 C7
C10
C8 RF OUT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NESG250134 COMPONENT LIST
VALUE C1 C2 C3, C4 C5 C6 C7 C8 C9, C10 L1 L2 R1 30 pF 6 pF 7 pF 3 pF 0.5 pF 5 pF 10 pF 100 nF 100 nH 3 nH 30 MAKER Murata Murata Murata Murata Murata Murata Murata Murata Toko Toko SSM
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER
30 25 20 15 10 5 0 -10 -5 0 5 VCE = 3.6 V, f = 460 MHz IC (set) = 40 mA GP 600 500 400 Pout IC 300 200
C
10 15
100 0 20
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Collector Current IC (mA), Collector Efficiency C (%)
Output Power Pout (dBm), Power Gain GP (dB)
NESG250134 DISTORTION EVALUATION BOARD (f = 460 MHz)
GND Vb C10 VC GND R1 C12 C11
C1 RF IN
SN SN
C9 RF OUT C8
C2
C3
L1
C4
C5
C6 C7
L2
Notes
1. 38 x 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes
DISTORTION EVALUATION CIRCUIT (f = 460 MHz)
VCE R1 VBE C11 C10 L2 L1 C1 RF IN C2 C3 C4 C5 C6 C7 C8 C9 RF OUT
C12
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NESG250134 COMPONENT LIST
VALUE C1 C2 C3, C4 C5 C6 C7 C8 C9 C10, C12 C11 L1 L2 R1 47 pF 12 pF 7 pF 3 pF 6 pF 0.5 pF 5 pF 51 pF 100 nF 1 F 100 nH 15 nH 30 MAKER Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Toko Toko SSM
DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
3RD ORDER INTERMODULATION DISTORTION vs. 1 TONE OUTPUT POWER
80 70 60 50 40 30 20 10 0 -5 0 5 10 15 20 25 VCE = 3.6 V, f = 460 MHz, IC (set) = 30 mA, offset = 1 MHz
3rd Order Intermodulation Distortion IM3 (dBc)
1 tone Output Power Pout (dBm)
Remark The graphs indicate nominal characteristics.
NESG250134 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm)
4.50.1 1.60.2 1.50.1
0.8 MIN.
1
0.420.06
2
3
4.00.25
2.50.1
0.420.06 0.470.06 1.5 3.0
0.41+0.03 -0.06
PIN CONNECTIONS
1. Collector 2. Emitter 3. Base
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
03/07/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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